Diagnostic techniques for semiconductor materials and devices (Montreal PQ, 6-8 May 1997)Rai-Choudhury, P; Benton, J.L; Schroder, D.K et al.SPIE proceedings series. 1997, isbn 0-8194-2765-9, IX, 478 p, isbn 0-8194-2765-9Conference Proceedings

Monitoring and reduction of alkali metal contamination in dielectric oxidesMAUTZ, K. E.SPIE proceedings series. 1997, pp 68-79, isbn 0-8194-2765-9Conference Paper

New concerns for detection of pinholes in the passivation layer of IC'sSABIN, E.SPIE proceedings series. 1997, pp 419-428, isbn 0-8194-2765-9Conference Paper

Identification and quantification of trace metal impurities in silicon using the ELYMAT lifetime measurementGUPTA, D. C.SPIE proceedings series. 1997, pp 267-279, isbn 0-8194-2765-9Conference Paper

Silicon on insulator characterization techniques and resultsWETTEROTH, T.SPIE proceedings series. 1997, pp 177-186, isbn 0-8194-2765-9Conference Paper

Carrier density and thermal images of transient filaments in GaAs photoconductive switchesFALK, R. A; ZUTAVERN, F. J; O'MALLY, M. W et al.SPIE proceedings series. 1997, pp 243-254, isbn 0-8194-2765-9Conference Paper

EBIC and TEM study of process induced defects in SOI wafersBONDARENKO, I. E; KONONCHUK, O. V; ROZGONYL, G. A et al.SPIE proceedings series. 1997, pp 32-38, isbn 0-8194-2765-9Conference Paper

Defects induced by arsenic ion implantation and thin film-edge stressesCHANG, G; AL, R; CHIOU, H.-D et al.SPIE proceedings series. 1997, pp 123-131, isbn 0-8194-2765-9Conference Paper

Electrical impedance spectroscopy of siliconVEDDEL, J; VISCOR, P.SPIE proceedings series. 1997, pp 365-376, isbn 0-8194-2765-9Conference Paper

Diffusion and out-diffusion behavior of Fe in Si wafer for different annealingYOSHIMI, T; SHABANI, M. B; OKUUCHI, S et al.SPIE proceedings series. 1997, pp 452-457, isbn 0-8194-2765-9Conference Paper

Practical metrology aspects of scanning capacitance microscopy for silicon 2-D dopant profilingKOPANSKI, J. J; MARCHIANDO, J. F; ALVIS, R et al.SPIE proceedings series. 1997, pp 102-113, isbn 0-8194-2765-9Conference Paper

Use of the contact potential difference probe to evaluate and minimize plasma damageFLORENCE, R. G; BAILEY, D. E.SPIE proceedings series. 1997, pp 350-356, isbn 0-8194-2765-9Conference Paper

An integrated spatial signature analysis and automatic defect classification systemGLEASON, S. S; TOBIN, K. W; KARNOWSKI, T. P et al.SPIE proceedings series. 1997, pp 204-211, isbn 0-8194-2765-9Conference Paper

Cyclic I-V and Q-V : New techniques for characterizing ultra-thin oxidesOKANDAN, M; MERRIT, M; FONASH, S et al.SPIE proceedings series. 1997, pp 295-309, isbn 0-8194-2765-9Conference Paper

Digital averaging and recording of DLTS signalsKOLEV, P; DEEN, M. J; ALBERDING, N et al.SPIE proceedings series. 1997, pp 377-388, isbn 0-8194-2765-9Conference Paper

Investigation of copper gettering using radio isotope and step-etching method in hydrogen-annealed and pbs, bsd treated silicon wafersSHIMOI, N; KOBAYASHI, N; MURAOKA, H et al.SPIE proceedings series. 1997, pp 412-418, isbn 0-8194-2765-9Conference Paper

Light scattering tomography for characterization of semiconductorsOGAWA, T; KISSINGER, G; NANGO, N et al.SPIE proceedings series. 1997, pp 132-146, isbn 0-8194-2765-9Conference Paper

Use of focused ion beams as a diagnostic toolBANEJCE, I; KIRCH, S. J.SPIE proceedings series. 1997, pp 16-31, isbn 0-8194-2765-9Conference Paper

Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs hbts from the photovoltaic effect observed in contactless electroreflectance and photoreflectancePOLLAK, F. H; GAVRILENKO, V. I; KRYSTEK, W et al.SPIE proceedings series. 1997, pp 255-266, isbn 0-8194-2765-9Conference Paper

In-situ determination of Si wafer contamination using photoconductance decay measurementsMICHEL, J; REDDY, A. J; NORGA, G. J et al.SPIE proceedings series. 1997, pp 212-222, isbn 0-8194-2765-9Conference Paper

Integrated circuit tester using interferometric imagingDONALDSON, W. R; MICHAELS, E. M. R; AKOWUAH, K et al.SPIE proceedings series. 1997, pp 171-176, isbn 0-8194-2765-9Conference Paper

Concentration and depth measurements of boron in semiconductor materials using neutron depth profilingÜNLÜ, K; WEHRING, B. W; HOSSAIN, T. Z et al.SPIE proceedings series. 1997, pp 458-469, isbn 0-8194-2765-9Conference Paper

Experimental study of degradation of mechanical strength of silicon wafer caused by LSI processesYAGISHITA, A; FUJII, O; NUMANO, M et al.SPIE proceedings series. 1997, pp 441-451, isbn 0-8194-2765-9Conference Paper

Lithium-ion drifting : Application to the study of point defects in floating-zone siliconWALTON, J. T; HALLER, E. E; KNOWLTON, W. B et al.SPIE proceedings series. 1997, pp 400-411, isbn 0-8194-2765-9Conference Paper

The use of constant-resistance DLTS to study proton radiation damages in CCD output MosfetsKOLEV, P. V; HARDY, T; DEEN, M. J et al.SPIE proceedings series. 1997, pp 389-399, isbn 0-8194-2765-9Conference Paper